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Basic setup of a device for liquid phase epitaxy (LPE), with which semiconductor heterostructures can be produced cost-effectively and in mass production.
The heated substrate is moved through the melt on a plate to build up the material layers. The materials to be deposited (such as silicon, gallium arsenide or germanium) are located in the melts.
In addition to the illustrated sliding of the substrate, there are other variations of liquid phase epitaxy: tilting and dipping of the substrate.